Компенсация саморазогрева в SiGe ГБТ

гетеропереходный биполярный транзистор; кремний-германий (SiGe); термосопротивление.

Особенности функционализации поверхности однослойного и мультислойного графена при окислении под действием ультрафиолетового облучения, Математическая модель излучателя электронной системы радиочастотной идентификации, ...

Self-heating Compensation of SiGe HBT Y.F. Adamov, V.P. Timochenkov National Research University of Electronic Technology, Moscow УДК 621.385 Компенсация саморазогрева в SiGe ГБТ Ю. <...> Тимошенков Национальный исследовательский университет МИЭТ In this paper, self-heating problem of the SiGe HBT is described. <...> Two schematic realizations for compensation of thermo- heated process in bipolar transistors are proposed. <...> Keywords: Heterojunction Bipolar Transistors (HBTs), Silicon Germanium (SiGe), Thermal impedance. <...> High speed applications like car radar modules (24 and 77GHz), wireless LAN (40/60 GHz) system [1] as well as 100Gb/s data communication [2] require to have high speed Heterojunction Bipolar Transistors (HBT) which should operate at high current. <...> High current mode of operation will effect of self-heated process in transistor structure which reflected on characteristics of the devices. <...> It is well known that the temperature of transistors active region is dependent from his working mode of operation and temperature resistance of transistor structure. <...> Self-heating of hetero-junction bipolar transistor (SiGe HBT) structure with germanium doped base will decrease of base-emitter voltage at constant collector current or increase collector current at constant base-emitter voltage. <...> At self-heating condition positive electro-temperature feedback is exist. <...> Time constant of self-heating strongly dependent from transistor structure and his size and will decrease if size of transistor is decrease. <...> Self-heating effect has spectrum from zero to tens of megahertz. <...> Comparison of regular Si bipolar transistor (BT) and HBT shows that HBT has in 5-7 time better frequency response at high current density. <...> But high current density is the reason of self-heating effect. <...> In integrated circuits (IC) of radio bands high path filters (HPF) are used for eliminating of low frequency heating processes of HBTs. <...> Self-heating process is introduced in modern models of HBT and silicon bipolar transistors such as VBIC, HiCUM, or MEXTREM [3, 4]. <...> The examples of schematics which compensate self-heating effect will be present below. Y.F. Adamov, V.P. Timochenkov, 2015 Известия вузов. <...> ЭЛЕКТРОНИКА Том 20 3 2015 323 <...>

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